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2N5663 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
4 | 2N5663 | Trans GP BJT NPN 300V 2A 3-Pin TO-5 | New Jersey Semiconductor |
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3 | 2N5663 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package 2N5663
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) | Seme LAB |
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2 | 2N5663 | NPN POWER SILICON TRANSISTOR TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/454 Devices 2N5660 2N5661 2N5662 2N5663 Qualified Level JAN, JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emit | Microsemi Corporation |
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1 | 2N5663 | Silicon NPN Transistor Description
Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N5663J) • JANTX level (2N5663JX) • JANTXV level (2N5663JV) • QCI to the applicable level • 100% die visual inspection per MIL | Semicoa Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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