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2N5875 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
6 | 2N5875T | Trans GP BJT PNP 60V 10A 3-Pin(2+Tab) TO-3 Sleeve | New Jersey Semiconductor |
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5 | 2N5875 | Trans GP BJT PNP 60V 10A 3-Pin(2+Tab) TO-3 Sleeve | New Jersey Semiconductor |
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4 | 2N5875 | (2N5875 - 2N5878) Transistor 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
| Central Semiconductor Corporation |
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3 | 2N5875 | (2N5875 / 2N5876) Silicon PNP Power Transistor SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5877 2N5878 APPLICATIONS ·For general-purpose power amplifier | SavantIC |
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2 | 2N5875 | POWER TRANSISTORS(10A/150W) A
A
A
| Mospec Semiconductor |
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1 | 2N5875 | Bipolar PNP Device 2N5875
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar PNP Device in a Hermetically sealed TO3
Metal Package.
38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.1 | Seme LAB |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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