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Datasheet 2N5883 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 8 | 2N5883 | SILICON EPITAXIAL PNP TRANSISTOR SILICON EPITAXIAL PNP TRANSISTOR
2N5883
• High Voltage, Low Saturation Voltages. • Hermetic TO3 Metal Package. • Designed For Power Switching
and Linear Applications • Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltag |
 TT |
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| 7 | 2N5883 | COMPLEMENTARY SILICON POWER TRANSISTORS 2N5883 2N5884 PNP 2N5885 2N5886 NPN
COMPLEMENTARY SILICON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5883, 2N5885 series types are complementary silicon epitaxial base transistors designed for power amplifier and switching applications.
MARKING: |
 Central Semiconductor |
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| 6 | 2N5883 | COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS |
 Motorola Semiconductors |
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| 5 | 2N5883 | POWER TRANSISTORS(25A/200W) A
A
A
A
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 Mospec Semiconductor |
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