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2N5933 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
2 | 2N5933 | Bipolar NPN Device 2N5933
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN Device in a Hermetically sealed TO3
Metal Package.
38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.1 | Seme LAB |
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1 | 2N5933 | Silicon NPN Power Transistors INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2N5933
DESCRIPTION ·DC Current Gain-
: hFE= 20-100@IC= 20A ·Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Max)@ IC= 20A
APPLICATIONS ·Designed for general p | Inchange Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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