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Datasheet 2N5952 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2N5952 | N-Channel RF Ampifier 2N5952
2N5952
N-Channel RF Ampifier
• This device is designed primarily for electronic switching applications such as low on resistance analog switching. • Sourced from process 50.
1
TO-92
1. Gate 2. Source 3. Drain
Absolute Maximum Ratings * TC=25°C unless otherwise noted
Symbol VDG VGS I |
 Fairchild Semiconductor |
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| 2 | 2N5952 | N-Channel JFET P-Channel Power MOSFET’s
Part No. Drain-Source Min. On-State Typ. Static DS Brkdwn. Voltg. DS Current Resistance BV DSS(V) ID(ON)(mA) RDS(ON)( Ω) Part No. Drain-Source Min. On-State Brkdwn. Voltg. DS Current BVDSS (V) I D(ON)(A) Typ. Static DS Resistance RDS(ON) (Ω ) Package Bulk/Reel
Operati |
 Taitron Components |
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| 1 | 2N5952 | Trans JFET N-CH Si 3-Pin TO-92 Box |
 New Jersey Semiconductor |
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