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2N6079 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
4 | 2N6079 | Trans GP BJT NPN 350V 7A 3-Pin(2+Tab) TO-66 | New Jersey Semiconductor |
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3 | 2N6079 | Bipolar NPN Device in a Hermetically sealed TO66 Metal Package 2N6079
Dimensions in mm (inches).
3.68 (0.145) rad. max.
6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad.
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package.
11.94 (0.470) 12.70 (0.500)
24.13 (0.95) 24.63 (0.97)
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14.48 (0.5 | Seme LAB |
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2 | 2N6079 | (2N6077 - 2N6079) Silicon Power Transistor SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6077 2N6078 2N6079
DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·High breakdown voltage APPLICATIONS ·For horizontal deflect | SavantIC |
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1 | 2N6079 | High Voltage Power Transistor | Solid State |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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