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Datasheet 2N6193 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2N6193 | HIGH SPEED PNP TRANSISTOR |  SSDI | transistor |
| 2 | 2N6193 | PNP Power Silicon Transistor 2N6193
PNP Power Silicon Transistor
Features
JAN, JANTX, JANTXV, JANS, and JANSR 100K rads (si) per MIL-PRF-19500/561
TO-39 (TO-205AD) Package
Rev. V1
Electrical Characteristics
Parameter
Test Conditions
Symbol Units
Off Characteristics
Collector - Emitter Breakdown Voltage Collector |  MA-COM | transistor |
| 3 | 2N6193 | PNP Silicon Power Transistor |  New Jersey Semi-Conductor | transistor |
| 4 | 2N6193 | Type 2N6193 Geometry 9700 Polarity PNP Data Sheet No. 2N6193
Type 2N6193
Geometry 9700 Polarity PNP Qual Level: JAN - JANTXV
Features: • • • • Silicon transistor for use in switching applications. Housed in a TO-39 case. Also available in chip form using the 9700 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/ |  Semicoa Semiconductor | data |
| 5 | 2N6193 | PNP Silicon Power Transistor 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
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|  Central Semiconductor | transistor |
2N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2N60 | N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD 2N60
2 Amps, 600 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche charact  Unisonic Technologies mosfet | | |
| 2 | 2N60-E | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
2N60-E
2A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. Unisonic Technologies mosfet | | |
| 3 | 2N6008 | Series 2N Transistors Sprague transistor | | |
| 4 | 2N6009 | Series 2N Transistors Sprague transistor | | |
| 5 | 2N6010 | Silicon Transistors Semiconductor transistor | | |
| 6 | 2N6027 | SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS 2N6027 2N6028
SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS
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DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characte Central Semiconductor transistor | | |
| 7 | 2N6027 | Programmable Unijunction Transistor 2N6027, 2N6028
Preferred Device
Programmable Unijunction Transistor
Programmable Unijunction Transistor Triggers
Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigge  ON Semiconductor transistor | |
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