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2N6232 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
2 | 2N6232 | Bipolar NPN Device 2N6232
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
6.10 (0.240) 6.60 (0.260)
12.70 (0.500)
min.
(00.0.8395)max.
0.41 (0.016) 0.53 (0.021)
dia.
5.08 (0.200) typ.
0.74 (0.029) 1.14 (0.045)
0.71 (0.028) 0.86 (0.034) | Seme LAB |
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1 | 2N6232 | SILICON NPN TRANSISTOR SILICON NPN TRANSISTOR
TECHNICAL DATA
Devices
2N6232
• FAST SWITCHING • LOW SATURATION VOLTAGE
10 AMP 100 V
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current – Peak (1) Base Curr | Microsemi |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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