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2N6235 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
4 | 2N6235 | Trans GP BJT NPN 325V 5A 3-Pin(2+Tab) TO-66 | New Jersey Semiconductor |
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3 | 2N6235 | Bipolar NPN Device in a Hermetically sealed TO66 Metal Package 2N6235
Dimensions in mm (inches).
3.68 (0.145) rad. max.
6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad.
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package.
11.94 (0.470) 12.70 (0.500)
24.13 (0.95) 24.63 (0.97)
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14.48 (0.5 | Seme LAB |
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2 | 2N6235 | 4 AMPERE POWER TRANSISTOR PNP SILICON | Motorola Inc |
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1 | 2N6235 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2N6235
DESCRIPTION ·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 325V(Min) ·DC Current Gain-
: hFE = 25-125@ IC= 1A ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.5V(Ma | Inchange Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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