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2N6247 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
3 | 2N6247 | Bipolar PNP Device in a Hermetically sealed TO3 Metal Package 2N6247
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0 | Seme LAB |
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2 | 2N6247 | SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS | ETC |
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1 | 2N6247 | (2N6246 - 2N6248) Silicon Power Transistor SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-pur | SavantIC |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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