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Datasheet 2N6255 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2N6255 | HIGH FREQUENCY TRANSISTOR 2N6255
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation Jq = 25°C
Derate above 25°C Storage Temperature
Symbol vCEO v CBO v EBO
ic
PD
Tstg
Value 18 36 4.0
1.0 5.0 28.5
-65 to +200
Unit Vdc Vdc |
 Motorola Semiconductors |
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| 2 | 2N6255 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
2N6255
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
• • • • Silicon NPN, To-39 packaged VHF Transistor 3.0 Watt Power Output @ 175 MHz Power Gain, GPE = 7.8 dB Efficiency = 50%
1. Emitter |
 Microsemi Corporation |
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| 1 | 2N6255 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
2N6255
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
• • • • Silicon NPN, To-39 packaged VHF Transistor 3.0 Watt Power Output @ 175 MHz Power Gain, GPE = 7.8 dB Efficiency = 50%
1. Emitter |
 Advanced Power Technology |
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