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2N6300 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
9 | 2N6300 | Trans Darlington NPN 60V 8A 3-Pin(2+Tab) TO-66 | New Jersey Semiconductor |
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8 | 2N6300 | Trans Darlington NPN 60V 8A 3-Pin(2+Tab) TO-66 | New Jersey Semiconductor |
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7 | 2N6300 | Trans Darlington NPN 60V 8A 3-Pin(2+Tab) TO-66 | New Jersey Semiconductor |
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6 | 2N6300 | POWER TRANSISTORS(8A/ 75W) A
A
A
A
| Mospec Semiconductor |
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5 | 2N6300 | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS | Boca Semiconductor Corporation |
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4 | 2N6300 | DARLINGTON SILICON POWER TRANSISTORS 2N6300 2N6301
MECHANICAL DATA Dimensions in mm (inches)
3.68 (0.145) rad.
max.
3.61 (0.142) 4.08(0.161)
rad.
12
6.35 (0.250) 8.64 (0.340)
DARLINGTON SILICON POWER TRANSISTORS
Designed for general purpose amplifier and low frequency
switching ap | Seme LAB |
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3 | 2N6300 | Silicon NPN Power Transistors SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6300 2N6301
DESCRIPTION ·With TO-66 package ·DARLINGTON ·Low collector saturation voltage ·Complement to type 2N6298/6299
APPLICATIONS ·General purpose power amplifie | Savantic |
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2 | 2N6300 | PNP DARLINGTON POWER SILICON TRANSISTOR TECHNICAL DATA
PNP DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/539
Devices
2N6300
2N6301
Qualified Level
JANTX JANTXV
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Bas | Microsemi |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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