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2N6312 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
6 | 2N6312 | Trans GP BJT PNP 40V 10A 3-Pin(2+Tab) TO-66 Sleeve | New Jersey Semiconductor |
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5 | 2N6312 | Power Transistor A
A
A
A
| Mospec Semiconductor |
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4 | 2N6312 | (2N6312 - 2N6314) Silicon Power Transistor SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·Low leakage current APPLICATIONS ·Designed for general-purpose power amplifier and | SavantIC |
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3 | 2N6312 | COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS | Boca Semiconductor Corporation |
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2 | 2N6312 | Bipolar PNP Device 2N6312
Dimensions in mm (inches).
3.68 (0.145) rad.
max.
3.61 (0.142) 4.08(0.161)
rad.
12
6.35 (0.250) 8.64 (0.340)
Bipolar PNP Device in a Hermetically sealed TO66
Metal Package.
Bipolar PNP Device. VCEO = 40V IC = 5A
24.13 (0.95) 24.63 (0.9 | Seme LAB |
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1 | 2N6312 | SILICON TRANSISTORS 2N4231A 2N4232A 2N4233A NPN 2N6312 2N6313 2N6314 PNP
COMPLEMENTARY SILICON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4231A, 2N6312 series devices are complementary silicon power transistors, manu | Central Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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