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2N6379 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
4 | 2N6379 | Trans GP BJT PNP 120V 50A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
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3 | 2N6379 | Silicon PNP Power Transistors INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
2N6379
DESCRIPTION ·Low Collector Saturation Voltage ·High DC Current Gain ·High Power Dissipation
APPLICATIONS ·Designed for use in industrial-military power a | Inchange Semiconductor |
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2 | 2N6379 | (2N6377 - 2N6379) HIGH-POWER PNP SILICON POWER TRANSISTOR | New England Semiconductor |
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1 | 2N6379 | (2N6377 - 2N6379) 50 Amp Power Transistors PNP Silicon | Motorola Semiconductors |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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