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2N6584 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | 2N6584 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2N6584
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 450V(Min) ·High Current Capability ·Collector-Emitter Saturation Voltage-
: VCE(sat)= | Inchange Semiconductor |
Numéro de référence | fiche technique | Fabricant | |
2N6588 | NPN Transistor |
SSDI |
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2N6584 | Silicon NPN Power Transistor |
Inchange Semiconductor |
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2N6583 | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
Seme LAB |
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2N6581 | Silicon NPN Power Transistor |
Inchange Semiconductor |
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2N6581 | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
Seme LAB |
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2N6580 | Silicon NPN Power Transistor |
Inchange Semiconductor |
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2N6589 | NPN Transistor |
SSDI |
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2N6583 | Silicon NPN Power Transistor |
Inchange Semiconductor |
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2N6582 | Silicon NPN Power Transistor |
Inchange Semiconductor |
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2N6581 | Trans GP BJT NPN 450V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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