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Datasheet 2N6661 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 10 | 2N6661 | N-Channel Enhancement-Mode Vertical DMOS FET 2N6661
N-Channel, Enhancement-Mode, Vertical DMOS FET
Features
• Free from secondary breakdown • Low power drive requirement • Ease of paralleling • Low CISS and fast switching speeds • Excellent thermal stability • Integral source-drain diode • High input impedance and high gain
Appl |
 Microchip |
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| 9 | 2N6661 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET
2N6661
• VDSS = 90V , ID = 0.9A, RDS(ON) = 4.0Ω • Fast Switching • Low Threshold Voltage (Logic Level) • Low CISS • Integral Source-Drain Body Diode • Hermetic Metal TO39 Package • High Reliability Screening Options Available
ABSOLUTE MAXIMUM |
 Seme LAB |
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| 8 | 2N6661 | N-Channel Enhancement-Mode Vertical DMOS FETs |
 Supertex Inc |
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| 7 | 2N6661 | TMOS SWITCHING FET TRANSISTORS 2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661
N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR
These TMOS Power FETs are designed. for high-current, high-
speed power switching applications such as switching power sup-
plies, ,CMOS logic, microprocessor or ~L-to-tiigh current .,interfa |
 Motorola Inc |
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