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Datasheet 2N6796 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2N6796 | TMOS FET TRANSISTOR N - CHANNEL 2N6796
MECHANICAL DATA Dimensions in mm (inches)
8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 )
7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 )
TMOS FET TRANSISTOR N – CHANNEL
6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 )
1 2 .7 0 (0 .5 0 0 ) m in .
0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia .
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| 3 | 2N6796 | 8A/ 100V/ 0.180 Ohm/ N-Channel Power MOSFET 2N6796
Data Sheet November 1998 File Number 1594.2
8A, 100V, 0.180 Ohm, N-Channel Power MOSFET
The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and driv |
 Intersil Corporation |
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| 2 | 2N6796 | Trans MOSFET N-CH 100V 8A 3-Pin TO-39 |
 New Jersey Semiconductor |
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| 1 | 2N6796LCC4 | N-CHANNEL POWER MOSFET 2N6796LCC4
MECHANICAL DATA Dimensions in mm (inches)
1.27 (0.050) 1.07 (0.040)
9.14 (0.360) 8.64 (0.340)
12 13 14 15 16
1.39 (0.055) 1.02 (0.040)
≈ 2.16 (0.085)
N-CHANNEL POWER MOSFET
VDSS = 100V = 7.4A
11
7.62 (0.300) 7.12 (0.280)
17 18 1 2
0.76 (0.030) 0.51 (0.020)
10 9 8
ID
7
6
5
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