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2N689 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
11 | 2N6898 | POWER MOSFET P CHANNEL WITH 25 AMPERE | New Jersey Semiconductor |
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10 | 2N689A | Thyristor SCR 500V 200A 3-Pin TO-48 Box | New Jersey Semiconductor |
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9 | 2N689 | Thyristor SCR 500V 200A 3-Pin TO-48 Box | New Jersey Semiconductor |
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8 | 2N6898 | Diode ( Rectifier ) | American Microsemiconductor |
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7 | 2N689 | 25 and 35 Amp RMS SCRs | Knox Semiconductor Inc |
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6 | 2N689 | 25 and 35 Amp RMS SCRs | International Rectifier |
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5 | 2N6898 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc P-Channel MOSFET Transistor
isc Product Specification
2N6898
DESCRIPTION ·SOA is power-dissipation limited ·Nanosecond switching speeds ·Linear transfer characteristics ·High input impedance ·Majority carrier device
| Inchange Semiconductor |
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4 | 2N689 | Power Triode Thyristors 2N682, 2N683, and 2N685 – 2N692
Available on commercial
versions
PNPN Silicon, Reverse-Blocking, Power Triode Thyristors
Qualified per MIL-PRF-19500/108
DESCRIPTION
This silicon controlled rectifier device is military qualified up to a JANTX le | Microsemi |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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