Datasheet 2N7000CSM Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2N7000CSM	N.CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 2N7000CSM MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 0.31 rad. (0.012) 0.51 ± 0.10 (0.02 ± 0.004) 2.54 ± 0.13 (0.10 ± 0.005) 3 FEATURES 0.76 ± 0.15 (0.03 ± 0.006) 2 1 • V(BR)DSS = 60V • RDS(ON) = 5W A 1.40 (0.055) max. 1.91 ± 0.10 (0.07	Seme LAB

2N7000 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2N7000	200mA, 60V, N-Channel MOSFET 2N7000 2N7002 N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFET™II MOSFET Table 1: General Features TYPE 2N7000 2N7002 Q Q Q Figure 1: Package RDS(on) Id 0.35 A 0.20 A 3 2 1 VDSS 60 V 60 V < 5 Ω (@ 10V) < 5 Ω (@ 10V) TYPICAL RDS(on) = 1.8Ω @10V	ST Microelectronics
2N7000	N-CHANNEL-ENHANCEMENT	TRSYS
2N7000	60V, 200mA, N-channel MOSFET MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7000/D TMOS FET Transistor N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 2N7000 Motorola Preferred Device MAXIMUM RATINGS Rating Drain Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Volt	Motorola Inc

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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