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2N7002K Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
36 | 2N7002K | N-Channel 60-V (D-S) MOSFET SPICE Device Model 2N7002K Vishay Siliconix N-Channel 60-V (D-S) MOSFET
CHARACTERISTICS
• N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to | Vishay Siliconix |
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35 | 2N7002K | Small Signal MOSFET 2N7002K, 2V7002K
Small Signal MOSFET
60 V, 380 mA, Single, N−Channel, SOT−23
Features
• ESD Protected • Low RDS(on) • Surface Mount Package • 2V Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requi | ON Semiconductor |
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34 | 2N7002K | N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT
Product Summary
V(BR)DSS 60V
RDS(ON) max
2Ω @ VGS = 10V 3Ω @ VGS = 5V
ID max TA = +25°C
380mA
310mA
Description
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching perf | Diodes Incorporated |
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33 | 2N7002KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N7002KW
300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET
DESCRIPTION
The UTC 2N7002KW uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suit | Unisonic Technologies |
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32 | 2N7002KW | N-Ch Small Signal MOSFET Elektronische Bauelemente
2N7002KW
115mA , 60V, RDS(ON) 4 N-Ch Small Signal MOSFET with ESD Protection
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
RDS(ON), VGS@10V, IDS@500mA=3 RDS(ON), [email protected] | SeCoS |
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31 | 2N7002KW | 60V N-Channel Enhancement Mode MOSFET 2N7002KW
60V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω
• Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very | Pan Jit International |
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30 | 2N7002KW | N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate MOSFETS
2N7002KW
V(BR)DSS
9
N-Channel MOSFET RDS(on)MAX
ȍ#9
ȍ#9
ID
P$
SOT-323
3
1. GATE
2. SOURCE
1
3. DRAIN
2
FEATURE z High density cell des | JCET |
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29 | 2N7002KW | N-Channel Enhancement Mode Field Effect Transistor 2N7002KW — N-Channel Enhancement Mode Field Effect Transistor
May 2011
2N7002KW
N-Channel Enhancement Mode Field Effect Transistor
Features
• Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed � | Fairchild Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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