Datasheet 2N7002LT3G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2N7002LT3G	Small Signal MOSFET 60 V/ 115 mA/ N−Channel SOT−23 2N7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Drain−Source Voltage Drain−Gate Voltage (RGS = 1.0 MW) Drain Current − Continuous TC = 25°C (Note 1) − Continuous TC = 100°C (Note 1) − Pulsed (Note 2) Gat	ON Semiconductor

2N7002L Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2N7002LT1	CASE 318-08/ STYLE 21 SOT-23 (TO-236AB) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7002LT1/D TMOS FET Transistor N–Channel Enhancement 3 DRAIN 1 GATE 2N7002LT1 Motorola Preferred Device 3 2 SOURCE MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Drain Curr	Motorola Inc
2N7002L	Small Signal MOSFET 60 V/ 115 mA/ N−Channel SOT−23 2N7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Drain−Source Voltage Drain−Gate Voltage (RGS = 1.0 MW) Drain Current − Continuous TC = 25°C (Note 1) − Continuous TC = 100°C (Note 1) �	ON Semiconductor
2N7002LT1	N-CHANNEL ENHANCEMENT	TRSYS

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Número de pieza	Descripción	Fabricantes	PDF
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