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Datasheet 2N7002W Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 10 | 2N7002W | Small Signal MOSFET Elektronische Bauelemente
2N7002W
115 mAMPS, 60VOLTS, RDS(on)=7.5 Small Signal MOSFET
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
N–Channel SOT–323
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Drain Current |
 SeCoS |
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| 9 | 2N7002W | N-Channel Enhancement Mode Field Effect Transistor 2N7002W — N-Channel Enhancement Mode Field Effect Transistor
October 2007
2N7002W
N-Channel Enhancement Mode Field Effect Transistor
Features
• Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surfac |
 Fairchild Semiconductor |
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| 8 | 2N7002W | N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate MOSFETS
2N7002W
V(BR)DSS
60 V
MOSFET (N-Channel)
RDS(on)MAX
5Ω@10V
7Ω@5V
ID
115mA
SOT-323
1. GATE 2. SOURCE 3. DRAIN
1
3 2
FEATURE z High density cell design for low RDS(ON) z Voltage controlled small s |
 JCET |
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| 7 | 2N7002W | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features
• Low-On Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 2) • "Green" Device (Note 3 and 4)
2N7002W
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT |
 Diodes Incorporated |
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