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Datasheet 2N722 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
12N722Bipolar NPN Device in a Hermetically sealed TO18 Metal Package

2N722 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. Bipolar NPN Device. VCEO = 35V 0.48 (0.019) 0.41 (0.016) dia. IC = All Semelab hermetically sealed products can be processed in accordance with the
Seme LAB
Seme LAB		data
22N7221JANTX/ JANTXV POWER MOSFET IN TO-254AA PACKAGE

2N7218, JANTX2N7218, JANTXV2N7218 2N7219, JANTX2N7219, JANTXV2N7219 2N7221, JANTX2N7221, JANTXV2N7221 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/596 100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche
ETC
ETC		mosfet
32N7222JANTX/ JANTXV POWER MOSFET IN TO-254AA PACKAGE

2N7218, JANTX2N7218, JANTXV2N7218 2N7219, JANTX2N7219, JANTXV2N7219 2N7221, JANTX2N7221, JANTXV2N7221 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/596 100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche
ETC
ETC		mosfet
42N7224N-CHANNEL POWER MOSFET

LAB MECHANICAL DATA Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) SEME 2N7224 IRFM150 N–CHANNEL POWER MOSFET VDSS ID(con
Seme LAB
Seme LAB		mosfet
52N7225N-CHANNEL MOSFET

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592 DEVICES LEVELS 2N7225 2N7225U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25
Microsemi Corporation
Microsemi Corporation		mosfet


2N7 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
12N70N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 2N70 2 Amps, 700 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The UTC 2N70 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. T
Unisonic Technologies
Unisonic Technologies		mosfet
22N70-MN-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 2N70-M Preliminary 2 Amps, 700 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N70-M is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characterist
Unisonic Technologies
Unisonic Technologies		mosfet
32N7000N-CHANNEL MOSFET

2N7000 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions TO-92 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-92 Plastic Package. 特征 / Features 灵敏的控制级触发电流和很低的维持电流。 Sensitive gate trigger current and Low Holding current. 用途 / Applic
BLUE ROCKET ELECTRONICS
BLUE ROCKET ELECTRONICS		mosfet
42N7000Small Signal MOSFET

2N7000 Small Signal MOSFET 200 mA, 60 V N-Channel Drain Gate Source 1. Source 2.Gate 3.Drain TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Drain Source Voltage Drain-Gate Voltage (RGS = 1 MΩ) Gate-source Voltage Drain Current Continuous Non-repetitive ( tp ≤ 50 �
SEMTECH
SEMTECH		mosfet
52N7000N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage Gate-Source Vol
KEC
KEC		transistor
62N7000Small Signal MOSFET

WEITRON Small Signal MOSFET N-Channel 3 DRAIN Features: *Low On-Resistance : 5Ω *Low Input Capacitance: 60PF *Low Out put Capacitance : 25PF *Low Threshole :1.4V(TYE) *Fast Switching Speed : 10ns 2 GATE 1 SOURCE 2N7000 TO-92 1. SOURCE 2. GATE 3. DRAIN 1 2 3 Maximum Ratings (TA=25 C Unless
WEITRON
WEITRON		mosfet
72N7000N-Channel Enhancement Mode Power MosFET

Elektronische Bauelemente 2N7000 200mA,60V,RDS(ON) 6 N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The 2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drives. D SEATING PLANE b1 TO-92 E S1
SeCoS
SeCoS		mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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