|
|
Datasheet 2N916CSM Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2N916CSM | Bipolar NPN Device www.DataSheet.co.kr
2N916CSM
Dimensions in mm (inches).
0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012)
2.54 ± 0.13 (0.10 ± 0.005)
3
2
1
1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) A=
0.76 ± 0.15 (0.03 ± 0.006)
Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surfa |  Seme LAB | data |
2N9 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2N90 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N90
·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 8.0Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching power supplies,converte  Inchange Semiconductor mosfet | | |
| 2 | 2N90 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N90
2A, 900V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a minimum on-state resistance and  Unisonic Technologies mosfet | | |
| 3 | 2N909 | SI NPN LO-PWR BJT New Jersey Semi-Conductor data | | |
| 4 | 2N914 | NPN Transistoor OEM: Telefunken
2N914
Datasheet
http://www.semicon-data.com/
OEM: Telefunken
2N914
Datasheet
http://www.semicon-data.com/
OEM: Telefunken
2N914
Datasheet
http://www.semicon-data.com/
OEM: Telefunken
2N914
Datasheet
http://www.semicon-data.com/
 Telefunken data | | |
| 5 | 2N914 | Transistor ETC transistor | | |
| 6 | 2N914 | SWITCHING TRANSISTOR Motorola Semiconductors transistor | | |
| 7 | 2N915 | GENERAL PURPOSE TRANSISTOR 2N915
CASE 22, STYLE 1
TO-18 (TO-206AA)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
Refer to 2N3946 for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
@Total Device Dissipation TA = 25°C
Derate above 25°C
@Total Device Dissipation Tq = 25°C
Derat Motorola Semiconductors transistor | |
| Esta página es del resultado de búsqueda del 2N916CSM. Si pulsa el resultado de búsqueda de 2N916CSM se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |