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Datasheet 2PG401 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 2PG401 | Insulated Gate Bipolar Transistor IGBTs
2PG401
Insulated Gate Bipolar Transistor
s Features
q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Allowing to provide with the surface mounting package
7.2±0.3 0.8±0.2
unit: mm
7.0±0.3 3.0±0.2
3.5±0.2
s Applications
q For flash-light for |
Panasonic Semiconductor |
2PG Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
2PG009 | Silicon N-Channel Enhancement IGBT |
Panasonic |
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2PG001 | N-channel enhancement mode IGBT |
Panasonic |
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2PG002 | N-Channel Enhancement Mode IGBT |
Panasonic |
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Número de pieza | Descripción | Fabricantes | |
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