Datasheet 2PG402 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2PG402	Insulated Gate Bipolar Transistor IGBTs 2PG402 Insulated Gate Bipolar Transistor s Features q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Housed in the surface mounting package unit: mm 6.5± 0.1 5.3± 0.1 4.35± 0.1 3.0± 0.1 q For flash-light for use in a camera 2.3± 0.1 0.2max.	Panasonic Semiconductor

2PG Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2PG009	Silicon N-Channel Enhancement IGBT This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG009 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits  Features  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: t	Panasonic
2PG001	N-channel enhancement mode IGBT This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits  Features  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High speed hall time: tf =	Panasonic
2PG002	N-Channel Enhancement Mode IGBT This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG002 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits  Features  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V  High speed hall time: tf =	Panasonic

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Número de pieza	Descripción	Fabricantes	PDF
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