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Datasheet 2SA1160 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SA1160 | Silicon PNP Epitaxial Type Transistor TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1160
Strobe Flash Applications Medium Power Amplifier Applications
2SA1160
Unit: mm
• High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 |
 Toshiba Semiconductor |
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| 1 | 2SA1160 | Plastic-Encapsulated Transistors Transys
Electronics
L I M I T E D
TO-92MOD Plastic-Encapsulated Transistors
TO-92MOD
1. EMITTER
2SA1160
FEATURE Power dissipation
TRANSISTOR (PNP)
2. COLLECTOR 3. BASE
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PCM : 0.9 W (Tamb=25℃)
Collector current ICM: -2A Collector-base voltage V(BR)CBO: -20 V Operating and s |
 TRANSYS Electronics Limited |
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