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Datasheet 2SA1179 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 2SA1179 | PNP / NPN Epitaxial Planar Silicon Transistors |
 Sanyo Semicon Device |
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| 4 | 2SA1179 | Transistor
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23
2SA1179
TRANSISTOR (PNP)
Plastic-Encapsulate Transistors
SOT-23
FEATURES . High breakdown voltage MARKING: M
1. BASE 2. EMITTER 3. COLLECTOR
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol VCBO VCEO VEBO IC P |
 ETC |
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| 3 | 2SA1179 | TRANSISTOR
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23
2SA1179
TRANSISTOR (PNP)
Plastic-Encapsulate Transistors
SOT-23
FEATURES . High breakdown voltage MARKING: M
1. BASE 2. EMITTER 3. COLLECTOR
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol VCBO VCEO VEBO IC P |
 Jiangsu Changjiang Electronics |
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| 2 | 2SA1179N | PNP / NPN Epitaxial Planar Silicon Transistors Ordering number : EN7198A
2SA1179N / 2SC2812N
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1179N / 2SC2812N Low-Frequency General-Purpose
Amp Applications
Features
• Miniature package facilitates miniaturization in end products. • High breakdown voltage.
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Sanyo Semicon Device |
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