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2SA1300 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
5 | 2SA1300 | PNP EPITAXIAL SILICON TRANSISTOR UTC 2SA1300
PNP EPITAXIAL SILICON TRANSISTOR
SILICON PNP EPITAXAL TYPE DESCRIPTION
*Strobo Flash Applications. *Medium Power Amplifier Applications.
FEATURES
*High DC Current Gain and Excellent hFE Linearity. *hFE(1)=140-600, (VCE= -1V,IC= -0.5A) | Unisonic Technologies |
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4 | 2SA1300 | Plastic-Encapsulated Transistors Transys
Electronics
L I M I T E D
TO-92 Plastic-Encapsulated Transistors
2SA1300
TRANSISTOR (PNP) TO-92
FEATURES Power dissipation PCM : 0.75 W (Tamb=25℃) Collector current A ICM : -2 Collector-base voltage V V(BR)CBO : -20 Operating and storag | TRANSYS |
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3 | 2SA1300 | TRANSISTOR (STROBO FLASH MEDIUM POWER AMPLIFIER APPLICATIONS) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1300
Strobe Flash Applications Medium Power Amplifier Applications
2SA1300
Unit: mm
· High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) | Toshiba Semiconductor |
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2 | 2SA1300 | PNP Plastic Encapsulated Transistor 2SA1300
Elektronische Bauelemente
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
-2 A, -20 V PNP Plastic Encapsulated Transistor
FEATURES
TO-92
High DC Current gain and excellent hFE linearity Low Saturation Vol | SeCoS |
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1 | 2SA1300 | PNP EPITAXIAL PLANAR TRANSISTOR DC COMPONENTS CO., LTD.
R
2SA1300
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use Strobe flash and medium power amplifier applications.
Pinning
1 = Emitter 2 = Collector 3 = Base
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