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2SA1430 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | 2SA1430 | Silicon PNP Epitaxial Type Transistor TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1430
Strobe Flash Applications Medium Power Amplifier Applications
2SA1430
Unit: mm
• High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0. | Toshiba Semiconductor |
Numéro de référence | fiche technique | Fabricant | |
2SA1433 | PNP Epitaxial Planar Silicon Transistor |
Sanyo Semicon Device |
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2SA1431 | Silicon PNP Epitaxial Type Transistor |
Toshiba Semiconductor |
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2SA1436 | PNP Epitaxial Planar Silicon Transistor |
Sanyo Semicon Device |
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2SA1435 | PNP Epitaxial Planar Silicon Transistor |
Sanyo Semicon Device |
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2SA1432 | Silicon PNP Epitaxial Type Transistor |
Toshiba Semiconductor |
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2SA1438 | PNP EPITAXIAL PLANAR SILICON TRANSISTOR |
Sanyo |
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2SA1437 | PNP Epitaxial Planar Silicon Transistor |
Sanyo Semicon Device |
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2SA1430 | Silicon PNP Epitaxial Type Transistor |
Toshiba Semiconductor |
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2SA1434 | PNP Epitaxial Planar Silicon Transistor |
Sanyo Semicon Device |
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2SA1434 | Transistor |
TY Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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