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2SA1444 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
3 | 2SA1444 | Trans GP BJT PNP 160V 1.5A 4-Pin(3+Tab) PCP | New Jersey Semiconductor |
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2 | 2SA1444 | PNP EPITAXIAL SILICON TRANSISTOR ( DataSheet : )
| ETC |
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1 | 2SA1444 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1444
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -60V(Min) ·High DC Current Gain-
: hFE= 100(Min)@ (VCE= -2V , IC= -3A) ·Low Saturation Volt | Inchange Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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