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2SA1586 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
6 | 2SA1586 | Transistor SMD Type
Product specification
Transistors
2SA1586
Features
High voltage and high current. Excellent hFE linearity. High hFE. Low noise. Small package.
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage | TY Semiconductor |
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5 | 2SA1586 | TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) | Toshiba Semiconductor |
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4 | 2SA1586 | PNP Silicon Plastic Encapsulated Transistor 2SA1586
Elektronische Bauelemente -0.15 A, -50 V PNP Silicon Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
High DC Current Gain High Voltage and High Current Compl | SeCoS |
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3 | 2SA1586 | Transistor SMD Type
Silicon PNP Epitaxial 2SA1586
Transistors IC
Features
High voltage and high current. Excellent hFE linearity. High hFE. Low noise. Small package.
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base volta | Kexin |
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2 | 2SA1586 | Transistor 2SA1 58 6
TRANSISTOR(PNP)
FEATURES High DC Current Gain High Voltage and High Current. Complementary to 2SC4116 Small Package APPLICATIONS General Purpose Amplification. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCB | Jin Yu Semiconductor |
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1 | 2SA1586W | PNP Silicon Epitaxial Planar Transistor BL Galaxy Electrical
PNP Silicon Epitaxial Planar Transistor
FEATURES
z z z z High voltage and high current. Excellent HFE Linearity. High hFE linearity. Complementary to 2SC4116.
Production specification
2SA1586W
Pb
Lead-free
APPLICATIONS
z Audi | Galaxy Semi-Conductor |
Numéro de référence | Description détaillée | Fabricant | |
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Micross |
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TDK |
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ROHM |
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