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2SA1647 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
4 | 2SA1647-Z | SILICON POWER TRANSISTOR ( DataSheet : )
'$7$ 6+((7
6,/,&21 32:(5 75$16,6725
6$ 6$=
313 6,/,&21 (3,7$;,$/ 75$16,6725 )25 +,*+63((' 6:,7&+,1*
The 2SA1647 is a mold power transistor developed for highspeed switching and features a very low col | NEC |
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3 | 2SA1647 | SILICON POWER TRANSISTOR ( DataSheet : )
'$7$ 6+((7
6,/,&21 32:(5 75$16,6725
6$ 6$=
313 6,/,&21 (3,7$;,$/ 75$16,6725 )25 +,*+63((' 6:,7&+,1*
The 2SA1647 is a mold power transistor developed for highspeed switching and features a very low col | NEC |
|
2 | 2SA1647-Z | Silicon PNP Power Transistor isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1647-Z
DESCRIPTION ·Available for high-current control in small dimension ·Low collector saturation voltage:
VCE(sat)= -0.3V(Max)@ IC= -3A ·Fast switching speed ·100% avalanche tested | Inchange Semiconductor |
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1 | 2SA1647 | Silicon PNP Power Transistor isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1647
DESCRIPTION ·Available for high-current control in small dimension ·Low collector saturation voltage:
VCE(sat)= -0.3V(Max)@ IC= -3A ·Fast switching speed ·100% avalanche tested ·M | Inchange Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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TDK |
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ROHM |
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