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2SA1891 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | 2SA1891 | Silicon PNP Epitaxial Type Transistor TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1891
Power Amplifier Applications Power Switching Applications
2SA1891
Unit: mm
• Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)
• High collector | Toshiba Semiconductor |
Numéro de référence | fiche technique | Fabricant | |
2SA1892 | Silicon PNP Epitaxial Type Transistor |
Toshiba Semiconductor |
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2SA1899 | TRANSISTOR (POWER AMPLIFIER/ DRIVER STAGE AMPLIFIER APPLICATIONS) |
Toshiba Semiconductor |
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2SA1898 | PNP Epitaxial Planar Silicon Transistor |
Sanyo Semicon Device |
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2SA1896 | PNP Epitaxial Planar Silicon Transistor |
Sanyo Semicon Device |
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2SA1890 | Silicon PNP Epitaxial Transistor |
Panasonic Semiconductor |
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2SA1893 | Silicon PNP Epitaxial Type Transistor |
Toshiba Semiconductor |
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2SA1891 | Silicon PNP Epitaxial Type Transistor |
Toshiba Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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