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2SA2061 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | 2SA2061 | Silicon PNP Epitaxial Type TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2061
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
2SA2061
Unit: mm
• High DC current gain: hFE = 200 to 500 (IC = −0.5 A) • Low collector-emitter saturatio | Toshiba Semiconductor |
Numéro de référence | fiche technique | Fabricant | |
2SA2061 | Silicon PNP Epitaxial Type |
Toshiba Semiconductor |
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2SA2064 | Silicon PNP Epitaxial Transistor |
Panasonic Semiconductor |
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2SA2069 | Silicon PNP Epitaxial Type Transistor |
Toshiba Semiconductor |
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2SA2062 | PNP Epitaxial Planar Silicon Transistor |
Sanyo Semicon Device |
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2SA2067 | Silicon PNP Epitaxial Transistor |
Panasonic Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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