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2SA505 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
3 | 2SA505 | Silicon PNP Epitaxial Transistor | New Jersey Semiconductor |
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2 | 2SA505 | SILICON PNP EPITAXIAL TYPE(PCT PROCESS) This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
| Toshiba Semiconductor |
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1 | 2SA505 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA505
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -50V (Min.) ·Collector-Emitter Saturation Voltage-
VCE(sat)= -0.8V (Max.)@ IC= -500mA
APPLICATIO | Inchange Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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