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2SAR512P Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
2 | 2SAR512P5 | Middle Power Transistors 2SAR512P5
Medium Power Transistors(-30V/-2A)
Parameter
VCEO IC
Value
-30V -2A
lFeatures
1)Low saturation voltage,typically VCE(sat)=-0.4V(Max.) (IC/IB=-700mA/-35mA) 2)High speed switching
lOutline
SOT-89 SC-62
MPT3
lInner circuit
| ROHM Semiconductor |
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1 | 2SAR512P | Midium Power Transistors Medium Power Transistors (−30V / −2A)
2SAR512P
Structure PNP Silicon epitaxial planar transistor
Features 1) Low saturation voltage, typically
VCE (sat) = -0.4V (Max.) (IC / IB= -700mA / -35mA) 2) High speed switching
Applications Driver
Pack | ROHM Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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