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2SB1016A Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | 2SB1016A | Silicon PNP Epitaxial Type Transistor TOSHIBA Transistor Silicon PNP Epitaxial Type
2SB1016A
Power Amplifier Applications
2SB1016A
Unit: mm
• High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE (sat) = −2.0 V (max) • Complementary to 2SD1407A | Toshiba Semiconductor |
Numéro de référence | fiche technique | Fabricant | |
2SB1016 | SILICON POWER TRANSISTOR |
SavantIC |
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2SB1016 | PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) |
Wing Shing Computer Components |
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2SB1016A | Silicon PNP Epitaxial Type Transistor |
Toshiba Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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