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Datasheet 2SB1188 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 12 | 2SB1188 | Medium power Transistor 5.5+−00..31 1.5±0.3 0.9 1.5
2.5 9.5±0.5
Medium power transistor (32V, 2A)
2SB1188 / 2SB1182 / 2SB1240
Features 1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.)
(IC/IB = 2A / 0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862.
Dimensions (Unit : mm)
2SB1188
4.5+−00..21 1.6±0. |
 ROHM Semiconductor |
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| 11 | 2SB1188 | Epitaxial Planar PNP Transistors 2SB1188
Epitaxial Planar PNP Transistors
SOT-89
1
1. BASE 2. COLLECTOR 3. EMITTER
2
3
C) ABSOLUTE MAXIMUM RATINGS (Ta=25%
Rating
Symbol
Limits
Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature, Storage |
 Weitron Technology |
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| 10 | 2SB1188 | MEDIUM POWER LOW VOLTAGE TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SB1188
MEDIUM POWER LOW VOLTAGE TRANSISTOR
DESCRIPTION
The UTC 2SB1188 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.
1
PNP SILICON TRANSISTOR
FEATURES
*High current output up to 3A *Low saturatio |
 Unisonic Technologies |
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| 9 | 2SB1188 | Plastic-Encapsulated Transistors Transys
Electronics
L I M I T E D
SOT-89 Plastic-Encapsulated Transistors
2SB1188
TRANSISTOR (PNP)
SOT-89
1. BASE
FEATURES Power dissipation PCM: 0.5 Collector current -2 ICM: Collector-base voltage V(BR)CBO: -40
W (Tamb=25℃) A
1 2. COLLECTOR 2 3. EMITTER 3
V
Operating and storage junctio |
 TRANSYS |
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