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Datasheet 2SB1261 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 2SB1261 | PNP Transistor 2SB1261
Transistor(PNP)
1. BASE
1 2. COLLECTOR
3. EMITTER
TO-252-2L
Features
High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.3V
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-60
VCEO
Collector-Emitter Voltage
-60
VEBO
Emi |
 LGE |
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| 4 | 2SB1261 | Silicon PNP transistor 2SB1261
Rev.E May.-2016
DATA SHEET
描述 / Descriptions TO-252 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-252 Plastic Package.
特征 / Features
hFE 线性好，饱和压降低，耗散功率大。 Excellent hFE linearity, low VCE(sat), high PC.
用途 / Applicatio |
 BLUE ROCKET ELECTRONICS |
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| 3 | 2SB1261-K | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2SB1261-K
DESCRIPTION ·Low Collector Saturation Voltage ·High Power Dissipation-
: PC= 10W(Max)@TC=25℃ ·Complement to Type 2SD1899-K
APPLICATIONS ·Designed for use in audio amplifier and switching,
especially |
 Inchange Semiconductor |
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| 2 | 2SB1261-Z | PNP SILICON EPITAXIAL TRANSISTOR MP-3 |
 NEC |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
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