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Datasheet 2SB1375 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2SB1375 | SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1375
Audio Frequency Power Amplifier
2SB1375
Unit: mm
• Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2 A, IB = −0.2 A)
• High power dissipation: PC = 25 W (Tc = 25°C) • Collector metal (fin) is covered with mold resin
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 Toshiba Semiconductor |
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| 3 | 2SB1375 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1375
DESCRIPTION ·With TO-220F package ·Complement to type 2SD2012 ·Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2A,IB=-0.2A ·Collector power dissipation: PC=25W(TC=25 ) APPLICAT |
 SavantIC |
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| 2 | 2SB1375 | Silicon PNP Triple Diffused Type Silicon PNP Triple Diffused Type
FEATURES
z Low Saturation Voltage:VCE(sat)=-1.5V(max.)
(IC/IB=-2A/-0.2A)
Pb
z High Power Dissipation:PC=25W(TC=25℃) Lead-free
z Complements the 2SD2012.
Production specification
2SB1375
TO-220AB
MAXIMUM RATING operating temperature range applies unless oth |
 Galaxy Microelectronics |
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| 1 | 2SB1375 | SILICON PNP TRANSISTOR 2SB1375(3CD1375)
硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于音频功率放大。
Purpose: Audio frequency power amplifier applications.
特点:饱和压降低，集电极耗散功率大；可与 2SD2012(3DD2012)互补。/Features: Low V ,CE(sat) High PC, complementary pair wit |
 BLUE ROCKET ELECTRONICS |
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