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2SB1386 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
7 | 2SB1386 | Epitaxial Planar Transistor PNP Silicon 2SB1386
Epitaxial Planar Transistor PNP Silicon
1
BASE COLLECTOR
3 1 2
EMITTER
3
2
SOT-23
MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO I | Weitron Technology |
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6 | 2SB1386 | LOW FREQUENCY PNP TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SB1386
LOW FREQUENCY PNP TRANSISTOR
1
PNP SILICON TRANSISTOR
FEATURES
* Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)
SOT-89
*Pb-free plating product numbe | Unisonic Technologies |
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5 | 2SB1386 | Low Frequency Transistor(-20V/-5A) Transistors
Low Frequency Transistor (*20V,*5A)
2SB1386 / 2SB1412 / 2SB1326 / 2SB1436
FFeatures 1) Low VCE(sat). VCE(sat) = *0.35V (Typ.) (IC / IB = *4A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2S | ROHM Semiconductor |
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4 | 2SB1386 | SOT-89 Plastic-Encapsulate Transistors WILLAS
S1O.0ATS-8UR9FAPClEaMsOtUicNT-ESCnHcOaTTpKsYuBAlaRtReIERTRraECnTsIFiIEsRtSo-r2s0V- 200V
SOD-123+ PACKAGE
FM120-M+ 2SB1386 THRU
FM1200-M+
Pb Free Product
Features
TRANSI•SBbTeaOtttceRhr pr(erPovcNeerPsses)
design, excellent power dissipat | WILLAS |
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3 | 2SB1386 | PNP Silicon Low Frequency Transistor Elektronische Bauelemente
2SB1386
-5A, -30V PNP Silicon Low Frequency Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Low VCE(sat) Excellent DC current gain characteristics Complements the 2SD2098
CLA | SeCoS |
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2 | 2SB1386 | Low Frequency Transistor SMD Type
Low Frequency Transistor 2SB1386
Transistors
Features
Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor
Absolute Maximum Ratings Ta = 25
Parameter Collecto | KEXIN |
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1 | 2SB1386 | PNP Transistor 2SB1 38 6
TRANSISTOR(PNP)
FEATURES z Low collector saturation voltage, z Execllent current-to-gain characteristics
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO VEBO IC PC TJ Tstg
Collect | Jin Yu Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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