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Datasheet 2SB1391 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SB1391 | Silicon PNP Triple Diffused 2SB1391
Silicon PNP Triple Diffused
Application
Power switching
Outline
TO-220FM
2
1 1. Base 2. Collector 3. Emitter
12 3
2 kΩ (Typ)
200 Ω (Typ) 3
2SB1391
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector c |
 Hitachi Semiconductor |
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| 2 | 2SB1391 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1391
DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power switching applications
PINNING PIN 1 2 3 Base Collector Emitt |
 SavantIC |
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| 1 | 2SB139100MA | LOW IR SCHOTTKY BARRIER DIODE CHIPS 2SB139100MA
2SB139100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø Ø 2SB139100MA is a schottky barrier diode chips
Lb
Due to special schottky barrier structure, the
chips
have very low reverse leakage current ( typical IR=0.002mA@ Vr=100V ) and maximum 150°C operation junction temperatu |
 Silan Microelectronics |
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