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Datasheet 2SB1427 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SB1427 | Power transistor ( 20V/2A) 2SB1427
Transistors
Power transistor (−20V, −2A)
2SB1427
!Features 1) Low saturation voltage, typically VCE(sat) = −0.5V at IC/IB = −1A / −50mA. 2) Excellent DC current gain characteristics. !External dimensions (Units : mm)
4.0 1.0 2.5 0.5
1.5 0.4
(1)
3.0
0.5
(3)
4.5
1.6
(2)
(1) |
 ROHM Semiconductor |
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| 2 | 2SB1427 | Power Transistor SMD Type
Power Transistor 2SB1427
Transistors
Features
Low saturation voltage, typically VCE(sat) =-0.5V at IC/IB =-1A/-50mA. Excellent DC current gain characteristics.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector curre |
 Kexin |
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| 1 | 2SB1427W6 | PNP Transistor P2SB1427W6
PNP Low Vce(sat) Transistor
Voltage
20V Current
3A
Features
Silicon PNP epitaxial type Low Vce(sat) -0.2V(max)@Ic/Ib=-1.6A/-53mA High collector current capability Excellent DC current gain characteristics Lead free in compliance with EU RoHS 2011/65/EU
directive. |
 Pan Jit International |
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