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2SB1710 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | 2SB1710 | PNP Middle Power Transistor 2SB1710
General purpose amplification (-30V, -1A)
Parameter
VCEO IC
Value
-30V -1A
lFeatures
1)A collector current is large. 2)Collector saturation voltage is low. VCE(sat)≦-350mV at IC=-500mA /IB= -25mA
lOutline
TSMT3
SOT-346 | ROHM Semiconductor |
Numéro de référence | fiche technique | Fabricant | |
2SB171 | (2SB170 - 2SB175) Ge PNP Alloy Junction |
ETC |
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2SB1710 | PNP Middle Power Transistor |
ROHM Semiconductor |
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2SB1714 | Bipolar transistor |
ROHM Semiconductor |
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2SB1713 | Bipolar transistor |
ROHM Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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