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Datasheet 2SB792 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | 2SB792 | Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) Transistor
2SB792, 2SB792A
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification Complementary to 2SD814
2.8 –0.3
+0.2
Unit: mm
s Features
q q q
0.65±0.15
+0.25 1.5 –0.05
0.65±0.15
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to |
 Panasonic Semiconductor |
 |
| 5 | 2SB792 | Transistor SMD Type
Silicon PNP Epitaxial Planar Type 2SB792,2SB792A
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
+0.1 2.4-0.1
High collector-emitter voltage VCEO Low noise voltage NV
+0.1 1.3-0.1
Features
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Em |
 Kexin |
|
| 4 | 2SB792 | Transistor Product specification
2SB792,2SB792A
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
+0.1 2.4-0.1
High collector-emitter voltage VCEO Low noise voltage NV
+0.1 1.3-0.1
Features
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maxim |
 TY Semiconductor |
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| 3 | 2SB792A | Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) Transistor
2SB792, 2SB792A
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification Complementary to 2SD814
2.8 –0.3
+0.2
Unit: mm
s Features
q q q
0.65±0.15
+0.25 1.5 –0.05
0.65±0.15
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to |
Panasonic Semiconductor |
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