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Datasheet 2SB834 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 10 | 2SB834 | SILICON PNP TRANSISTOR 2SB834(3CA834)
硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于音频功率放大。
Purpose: Audio frequency power amplifier applications.
特点:饱和压降低，集电极耗散功率大,与 2SD880(3DD880)互补。
Features: Low collector saturation voltage, collector power dissi |
 LZG |
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| 9 | 2SB834 | POWER TRANSISTORS(3.0A/60V/30W) A
A
A
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 Mospec Semiconductor |
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| 8 | 2SB834 | PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) 2SB834
PNP
EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
TO-220
! Complement to 2SD880
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation(Tc=25°C) Junction Temperatur |
 Wing Shing Computer Components |
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| 7 | 2SB834 | Plastic-Encapsulated Transistors Transys
Electronics
L I M I T E D
TO-220 Plastic-Encapsulated Transistors
2SB834
TRANSISTOR (PNP)
TO-220
1. BASE 2. COLLECTOR
FEATURES Power dissipation PCM: 1.5 W (Tamb=25℃)
Sheet4U.com
3. EMITTER
Collector current -3 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage juncti |
 TRANSYS |
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