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2SB897 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | 2SB897 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2SB897
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -10A ·Low Collector Saturation Voltage-
: VCE(sat) = -1.5V(Max.) @IC= 10A ·Complement t | Inchange Semiconductor |
Numéro de référence | fiche technique | Fabricant | |
2SB892 | Transistor |
Jiangsu Changjiang Electronics |
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2SB892 | PNP/NPN Epitaxial Planar Silicon Darlington Transistors |
Sanyo Semicon Device |
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2SB897 | Silicon PNP Power Transistor |
Inchange Semiconductor |
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2SB891 | Silicon PNP Power Transistor |
Inchange Semiconductor |
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2SB891 | Epitaxial Planar PNP Silicon Transistor |
ROHM Semiconductor |
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2SB893 | PNP Epitaxial Planar Silicon Transistor |
Sanyo Semicon Device |
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2SB892 | PNP / NPN Epitaxial Planar Silicon Transistors |
ON Semiconductor |
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2SB899F | (2SBxxxx) MEDIUM POWER TRANSISTOR |
ROHM Semiconductor |
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2SB891F | SILICON POWER TRANSISTOR |
SavantIC |
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2SB896A | SILICON POWER TRANSISTOR |
SavantIC |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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