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Datasheet 2SB906 PDF ( Fiche technique )



2SB906 Fiches techniques

Numéro de référence Description détaillée Fabricant PDF
3 2SB906   Transistor

Product specification 2SB906 TO-252 +0.15 1.50 -0.15 Features Low collector saturation voltage. High power dissipation. Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127
TY Semiconductor
TY Semiconductor
PDF
2 2SB906   TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)

Toshiba Semiconductor
Toshiba Semiconductor
PDF
1 2SB906   Transistor

SMD Type Silicon PNP Epitaxial 2SB906 TO-252 +0.15 1.50 -0.15 Transistors Features Low collector saturation voltage. High power dissipation. Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.
Kexin
Kexin
PDF


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Fiche de données de référence

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Micross
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