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2SB906 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
3 | 2SB906 | Transistor Product specification
2SB906
TO-252
+0.15 1.50 -0.15
Features
Low collector saturation voltage. High power dissipation.
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.2 9.70 -0.2
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 | TY Semiconductor |
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2 | 2SB906 | TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) | Toshiba Semiconductor |
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1 | 2SB906 | Transistor SMD Type
Silicon PNP Epitaxial 2SB906
TO-252
+0.15 1.50 -0.15
Transistors
Features
Low collector saturation voltage. High power dissipation.
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.2 9.70 -0.2
+0.1 0.80-0.1
+0. | Kexin |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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