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2SB929A Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
4 | 2SB929A | Transistor Product specification
2SB929A
TO-252
+0.15 1.50 -0.15
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
High forward current transfer ratio hFE which has satisfactory linearity.
+0.2 9.70 -0.2
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.1 0.80-0.1
+0.15 0 | TY Semiconductor |
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3 | 2SB929A | Silicon PNP epitaxial planar type(For power amplification) Power Transistors
2SB929, 2SB929A
Silicon PNP epitaxial planar type
10.0±0.3 1.5±0.1
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
For power amplification Complementary to 2SD1252 and 2SD1252A
s Features
q q q
High forward current transfer rati | Panasonic Semiconductor |
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2 | 2SB929A | Transistor SMD Type
Silicon PNP Epitaxial Planar Type 2SB929A
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
High forward current transfer ratio hFE which has satisfactory linearity.
+0.2 9.70 -0.2
6.50 +0.2 5.30-0.2
+0. | Kexin |
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1 | 2SB929A | Power Transistors Power Transistors
2SB0929 (2SB929), 2SB0929A (2SB929A)
www.DataSheet4U.net
Silicon PNP epitaxial planar type
For power amplification Complementary to 2SD1252, 2SD1252A
8.5±0.2
Unit: mm
3.4±0.3 1.0±0.1 6.0±0.2
10.0±0.3 1.5±0.1
■ Features
| Panasonic Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
|
B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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